Wafer Charging Monitors Publications

Wafer Charging Monitors, Inc.

Publications

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W. Lukaszek and C. Gabriel, The effect of Substrate Connections on Charging Potentials and Current Densities, 5th International Symposium on Plasma Process-Induced Damage, Monterey, CA, May 14-15, 2001.
M. Kobayashi, et al., Influence of Etch Process Sequence on CHARM-2 Wafer in Magnetically Enhanced RIE Etcher, ECS International Semiconductor Technology Conference, Shanghai, China, May 27-30, 2001.
W. Lukaszek, Wafer Charging Damage in IC Process Equipment, ECS International Semiconductor Technology Conference, Shanghai, China, May 27-30, 2001.
W. Lukaszek, Influence of Scribe Lane Structures on Wafer Potentials and Charging Damage, 5th International Symposium on Plasma Process-Induced Damage, Santa Clara, CA, May 22-24, 2000.
J.-P. Carrere, T. Poiroux, W. Lukaszek, C. Verove, M. Haond, G. Reimbold, and G. Turban, Electron-Shading Characterization in a HDP Contact Etching Process Using a Patterned CHARM Wafer, 5th International Symposium on Plasma Process-Induced Damage, Santa Clara, CA, May 22-24, 2000.
M. Current, W. Lukaszek, and M. Vella, Control of Wafer Charging During Ion Implantation: Issues, Monitors and Models, 5th International Symposium on Plasma Process-Induced Damage, Santa Clara, CA, May 22-24, 2000.
M. Joshi, J. McVittie, K. Saraswat, C. Cismaru, and J. Shohet, Measurement of VUV Induced Surface Conduction in Dielectrics Using Synchrotron Radiation, 5th International Symposium on Plasma Process-Induced Damage, Santa Clara, CA, May 22-24, 2000.
D. Fleming and C. Mullis, An Improved Secondary Electron Flood Helps Control Ion Implant Charge, Solid State Technology, April 2000, pp. 63-66.
S. Lassig, V. Vahedi, N. Benjamin, P. Mulgrew, and R. Gottscho, Effects of Processing Pressure on Device Damage in RF Biased ECR CVD, 4th International Symposium on Plasma Process-Induced Damage, Monterey, CA, May 10-11, 1999.
W. Lukaszek, M. Rendon, and D. Dyer, Device Effects and Charging Damage: Correlations Between SPIDER-MEM and CHARM®-2, 4th International Symposium on Plasma Process-Induced Damage, Monterey, CA, May 10-11, 1999.
M. Lee, J. Hu, W. Catabay, P. Schoenborn and A. Butkus, Comparison of CHARM-2 and Surface Potential Measurement to Monitor Plasma Induced Gate Oxide Damage, 4th International Symposium on Plasma Process-Induced Damage, Monterey, CA, May 10-11, 1999.
W. Lukaszek, Understanding and Controlling Wafer Charging Damage, Solid State Technology, June 1998, pp. 101-112.
S. Reno, H. Gonzalez, C. Messick, W. Lukaszek, D. St. Angelo, K. Becker, B. Rogers, and T. Romanski, Characterizing Electron Shower with Charm-2 Wafers on Eaton NV-8200P Medium Current Ion Implanter, 12th International Conference on Ion Implantation Technology (IIT/98), Kyoto, Japan, June 22-26, 1998.
H. Gonzalez, S. Reno, C. Messick, W. Lukaszek, and T. Romanski, Monitoring Charging in High Current Ion Implanters Yields Optimum Preventive Maintenance Schedules and Procedures, 12th International Conference on Ion Implantation Technology (IIT/98), Kyoto, Japan, June 22-26, 1998.
W. Lukaszek and M. Current, Photoresist Mask Design for Evaluation of Resist-Mediated Charging Effects During High Current Ion Implantation, 12th International Conference on Ion Implantation Technology (IIT/98), Kyoto, Japan, June 22-26, 1998.
M. Current, M. Foad, S. Brown, W. Lukaszek, and M. Vella, Photoresist Effects on Wafer Charging Control: Current-Voltage Characteristics Measured with CHARM-2 Monitors During High-Current As+ Implantation, 12th International Conference on Ion Implantation Technology (IIT/98), Kyoto, Japan, June 22-26, 1998.
S. Daryanani and J. Shields, Comparison of Implant Charging Results Obtained with QUANTOX® and CHARM®-2, 12th International Conference on Ion Implantation Technology (IIT/98), Kyoto, Japan, June 22-26, 1998.
K. Cheung, J. Colonell, K. Steiner, S. Shive, T. Kook, C. Chang, W. Lai, C. Liu, R. Liu, C. Pai, H. Vaidya and J. Clemens, Is Surface Potential Measurement (SPM) a Useful Charging Damage Measurement Method?, 3rd International Symposium on Plasma Process-Induced Damage (P2ID), Honolulu, HI, June 4-5, 1998.
K. Cheung, C. Liu, C. Chang, J. Colonell, Y.Lai, C. Pai, H. Vaidya, R. Liu, J. Clemens and E. Hasegawa, Charging Damage in Thin Gate-Oxides -- Better or Worse?, 3rd International Symposium on Plasma Process-Induced Damage (P2ID), Honolulu, HI, June 4-5, 1998.
W. Lukaszek, J. Shields, and A. Birrell, Quantifying Via Charging Currents, 2nd International Symposium on Plasma Process-Induced Damage, Monterey, CA, May 12-14, 1997.
W. Lukaszek, Characterization of Wafer Charging in ECR Etching, 2nd International Symposium on Plasma Process-Induced Damage, Monterey, CA, May 12-14, 1997.
R. Patrick, P. Jones, W. Lukaszek, J. Shields, and A. Birrell, Study of Pattern Dependent Charging in a High-density, Inductively Coupled Metal Etcher, 2nd International Symposium on Plasma Process-Induced Damage", Monterey, CA, May 12-14, 1997.
Michael Current, Michael C. Vella, W. Lukaszek, Charging Effects In Ion Implantation: Measurements and Models, 1st International Symposium on Plasma Process-Induced Damage, Santa Clara, CA, May 13-14, 1996.
Michael I. Current, Sander de Haan, A Study of Wafer Charging with CHARM-2 and Large Area Capacitor Monitors, 1st International Symposium on Plasma Process-Induced Damage, Santa Clara, CA, May 13-14, 1996.
W. Lukaszek, S. Reno, and R. Bammi, Influence of Photoresist on Wafer Charging During High Current Arsenic Implant, XI International Conference on Ion Implantation Technology, Austin, Texas, June 17-21, 1996.
W. Lukaszek and A. Birrell, Quantifying Wafer Charging During Via Etch,1st International Symposium on Plasma Process-Induced Damage, Santa Clara, CA, May 13-14, 1996.
S. Reno, R. Bammi, Using CHARM-2 Wafers To Increase Reliablility In Ion Implant Processing, IEEE 1995 International Integrated Reliability Workship Final Report, pp. 11-17.
J. Shideler, S. Reno, R. Bammi, C. Messick, A. Cowley, and W. Lukaszek, A New Technique for Solving Wafer Charging Problems, Semiconductor Intermational, July 1995, pp. 153-158.
M. C. Vella, W. Lukaszek, M. I. Current, N. H. Tripsas, Plasma Model for Charging Damage, Nuclear Instruments and Methods in Physics Research, B 96, 1995, pp. 48-51.

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1.  Effect of Substrate Connections on Charging Potentials and Current Densities
2.  Influence of Etch Process Sequence . . . in Magnetically Enhanced RIE Etcher
3.  Wafer Charging Damage in IC Process Equipment
4.  Influence of Scribe Lane Structures on Wafer Potentials and Charging Damage
5.  Electron-Shading Characterization in a HDP Contact Etching Process Using a Patterned CHARM Wafer
6.  Control of Wafer Charging During Ion Implantation: Issues, Monitors and Models
7.  Measurement of VUV Induced Surface Conduction in Dielectrics Using Synchrotron Radiation
8.  An Improved Secondary Electron Flood Helps Control Ion Implant Charge
9.  Effects of Processing Pressure on Device Damage in RF Biased ECR CVD
10.  Device Effects . . . Correlations Between SPIDER-MEM and CHARM®-2
11.  Comparison of CHARM-2 and Surface Potential Measurement . . . Gate Oxide Damage
12.  Understanding and Controlling Wafer Charging Damage
13.  Characterizing Electron Shower with Charm-2 Wafers on Eaton NV-8200P . . . Implanter
14.  Monitoring Charging in High Current Ion Implanters . . . Preventive Maintenance . . .
15.  Photoresist Mask Design for . . . Charging Effects During High Current Ion Implantation
16.  Photoresist Effects on Wafer Charging Control: During High-Current As+ Implantation
17.  Comparison of Implant Charging Results Obtained with QUANTOX® and CHARM®-2
18.  Is Surface Potential Measurement (SPM) a Useful Charging Damage Measurement Method?
19.  Charging Damage in Thin Gate-Oxides -- Better or Worse?
20.  Quantifying Via Charging Currents
21.  Characterization of Wafer Charging in ECR Etching
22.  Study of Pattern Dependent Charging in a High-density, Inductively Coupled Metal Etcher
23.  Charging Effects In Ion Implantation: Measurements and Models
24.  A Study of Wafer Charging with CHARM-2 and Large Area Capacitor Monitors
25.  Influence of Photoresist on Wafer Charging During High Current Arsenic Implant
26.  Quantifying Wafer Charging During Via Etch
27.  Using CHARM-2 Wafers To Increase Reliablility In Ion Implant Processing
28.  A New Technique for Solving Wafer Charging Problems
29.  Plasma Model for Charging Damage

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